CVD of Thin Ruby Films on Si(100) and Stainless Steel for Surface Temperature Sensor Applications
CVD of Thin Ruby Films on Si(100) and Stainless Steel for Surface Temperature Sensor Applications
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用于表面温度传感器应用的 Si(100) 和不锈钢上红宝石薄膜的 CVD
DOI：
10.1002/cvde.200606564
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发表时间：
2007
影响因子：
--
通讯作者：
B. Atakan
中科院分区：
文献类型：
--
作者：
Christian Pflitsch;Dorothee Viefhaus;B. Atakan
表面温度测量在许多应用中至关重要;一种有前途的方法是使用热成像磷光体。用这种材料涂覆的表面的温度可以通过测量和评估发光来容易地检测。在本研究中，铬掺杂的氧化铝薄膜（红宝石）的Si（100）和不锈钢衬底上的CVD研究相对于此应用。在冷壁反应器中，在200 hPa（200 mbar）和240 hPa之间的压力和1273 K和1473 K之间的温度下，从氧气和铝和铬的乙酰丙酮化物沉积膜。含有1%铬的氧化铝的生长通过X射线衍射（XRD）、扫描电子显微镜（SEM）和能量色散X射线（EDX）光谱来确认。在1273 K下生长的薄膜主要为γ-Al 2 O3和θ-Al 2 O3，而α-Al 2 O3薄膜在较高温度下生长。通过激光激发分析薄膜的温度依赖性发光。以α-Al_2O_3为主成分的薄膜具有典型的红宝石磷光特性，其磷光寿命在298 K时为2.3 ms ~ 813 K时为6 μs。
Surface temperature measurements are crucial in many applications; one promising approach is the use of thermographic phosphors. The temperatures of surfaces coated with such a material can easily be detected by measuring and evaluating the luminescence. In the present study, the CVD of chromium-doped aluminum oxide films (ruby) on Si(100) and stainless steel substrates is investigated with respect to this application. Films are deposited in a cold-wall reactor from oxygen and the acetylacetonates of aluminum and chromium under pressures between 200 hPa (200 mbar) and 240 hPa, and at temperatures between 1273 K and 1473 K. The growth of aluminum oxide, containing 1 % chromium, is confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy. While films grown at 1273 K are mainly γ-Al2O3 and θ-Al2O3, α-Al2O3 films are grown at higher temperatures. The films are analyzed by laser excitation with regard to the temperature-dependent luminescence. The films consisting of mainly α-Al2O3 are promising as temperature sensors, they show the typical phosphorescence of ruby, with phosphorescence lifetimes between 2.3 ms at 298 K and 6 μs at 813 K.