High Electric Conductivity in a Naphthalene Tetracaboxylic Dianhydride Film Molecularly Doped with Indium
High Electric Conductivity in a Naphthalene Tetracaboxylic Dianhydride Film Molecularly Doped with Indium
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铟分子掺杂的萘四羧酸二酐薄膜的高导电性
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
M. Yokoyama
中科院分区：
文献类型：
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作者：
K. Nakayama;Y. Niguma;Y. Matsui;M. Yokoyama
在1,4,5,8-萘四甲酸二酐（NTCDA）和铟的共沉积薄膜中观察到超过10-2 S/cm的高电导率，表现出以电子吸收和电子自旋共振（ESR）显着变化为特征的电子相互作用。电导率的增加归因于从铟到 NTCDA 的羰基氧的电荷转移，因此，很大程度上取决于有机分子的化学结构。这一结果提出了低分子半导体化学掺杂的新指导原则，利用分子和金属组合特有的化学相互作用。
High electric conductivity exceeding 10-2 S/cm was observed in a co-deposited film of 1,4,5,8-naphthalene-tetracarboxylic-dianhydride (NTCDA) and indium, exhibiting electronic interaction characterized by remarkable changes of electronic absorption and electron spin resonance (ESR). The increase of conductivity was attributed to charge transfer from indium to the carbonyl oxygen of NTCDA, and therefore, was strongly dependent on the chemical structure of organic molecules. This result suggests a new guiding principle of chemical doping in low-molecular semiconductors, utilizing chemical interactions peculiar to the combination of molecules and metals.