Ultrahigh energy storage density in lead-free relaxor antiferroelectric ceramics via domain engineering
Ultrahigh energy storage density in lead-free relaxor antiferroelectric ceramics via domain engineering
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DOI:
10.1016/j.ensm.2021.09.018
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发表时间:
2021-09-27
影响因子:
20.4
通讯作者:
Zhang, Shan-Tao
中科院分区:
文献类型:
--
作者:
Jiang, Jie;Meng, Xiangjun;Zhang, Shan-Tao
Dielectric capacitors have drawn growing attention for their wide application in future high power and/or pulsed power electronic systems. However, the recoverable energy storage density (W-rec) for dielectric ceramics is relatively low up to now, which largely restricts their actual application. Herein, the domain engineering is employed to construct relaxor antiferroelectric NaNbO3-BiFeO3 bulk ceramics, which integrates the merits of antiferroelectrics and relaxors. It is revealed that the antiferroelectric phase transforms from orthorhombic P to R phase, and antiferroelectric domain evolves from micron-sized blocks to nanoscale clusters. Of particular importance is that the 0.90NaNbO(3)-0.10BiFeO(3) ceramic demonstrates ultrahigh W-rec of 18.5 J cm(-3) with giant electric breakdown strength of 99.5 kV mm(-1), which is superior than state-of-the-art bulk dielectric ceramics. Moreover, the 0.90NaNbO(3)-0.10BiFeO(3) ceramic exhibits superior frequency, cycling and thermal reliability, as well as the substantial current density (2140.6 A cm(-2)), ultrahigh power density (428.1 MW cm(-3)) and ultrafast discharge rate (14 ns). These results not only suggest that the NaNbO3-based relaxor antiferroelectric ceramics are promising candidates for advanced energy storage capacitors, but also provide feasible strategy of domain engineering to develop novel lead-free high-performance dielectric materials.