Preparation and properties of FeAs2 and FeSb2
Preparation and properties of FeAs2 and FeSb2
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DOI：
10.1016/0022-4596(72)90021-7
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发表时间：
1972-07
影响因子：
3.3
通讯作者：
A. K. Fan;G. Rosenthal;H. McKinzie;A. Wold
中科院分区：
文献类型：
--
作者：
A. K. Fan;G. Rosenthal;H. McKinzie;A. Wold
以氯气为输运剂，采用化学气相输运法制备了FeAs 2和FeSb 2单晶。已经对表征良好的样品进行了电磁测量。FeAs2是一种抗磁性半导体，带隙为0.22 eV。FeSb 2具有极窄的带隙，并显示出不同寻常的电和磁性能。提出的能带模型解释了实验结果。
Single crystals of FeAs2and FeSb2were prepared by chemical vapor transport using chlorine as the transporting agent. Electrical and magnetic measurements have been made on well-characterized samples. FeAs2was found to be a diamagnetic semiconductor with a band gap of 0.22 eV. FeSb2has an extremely narrow band gap and shows unusual electrical and magnetic properties. Aproposed band model is used to explain the experimental results.