Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets
Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets
复制标题
晶体管附近的氢化和非氢化材料对中子诱发的单粒子扰动的影响
DOI：
10.1109/irps45951.2020.9128951
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
and Y. Miyake
中科院分区：
文献类型：
--
作者：
S. Abe;T. Sato;J. Kuroda;S. Manabe;Y. Watanabe;W. Liao;K. Ito;M. Hashimoto;M. Harada;K. Oikawa;and Y. Miyake
通过模拟 65 纳米技术体静态随机存取存储器上的单能中子辐照，研究了晶体管附近的氢化和非氢化材料对中子诱发的单粒子翻转 (SEU) 的影响。由 H 离子引起的 SEU 的起始能量取决于放置在晶体管前面的组件（当这些组件不含氢原子时）的屏蔽能力，即材料和厚度。屏蔽能力还影响 SEU 横截面能量依赖性中观察到的初始斜率。考虑到模拟中使用的存储单元上附着的非氢化部件，每个中子设施测量的所有实验数据都可以使用模拟获得的 SEU 横截面很好地再现。我们还发现，即使对于白中子照射，晶体管附近的组件对中子引起的软错误率的影响也不能忽略不计。
The impacts of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets (SEUs) were investigated by simulating monoenergetic neutron irradiations on 65-nm technology bulk static random access memories. The onset energy of the SEUs induced by H ions depends on the shielding capability, i.e., the material and thickness, of components placed in front of transistors when those components do not contain hydrogen atoms. The shielding capability also influences the initial slope observed in the energy-dependence of SEU cross sections. Taking into account the non-hydrided component attached to memory cells used in the simulation, all experimental data measured at each neutron facility were reproduced well using SEU cross sections obtained by simulation. We also find that the effect of components near transistors on neutron-induced soft error rates is not negligible even for irradiation by white neutrons.