CdTe thin films as protective surface passivation to HgCdTe layers for the IR and THz detectors
CdTe thin films as protective surface passivation to HgCdTe layers for the IR and THz detectors
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DOI：
10.1016/j.mssp.2020.105577
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发表时间：
2021-03-15
影响因子：
4.1
通讯作者：
Smolii, M.
中科院分区：
文献类型：
--
作者：
Sizov, F.;Vuichyk, M.;Smolii, M.
采用热壁外延（HWE）方法在低温（T = 360 nm）工艺条件下生长的CdTe薄盖层具有连续的特性，在Hg 1-xCdxTe/CdZnTe红外探测器中具有有效的保护性能。所制造的光电二极管探测器表现出相对良好的参数：对于长波范围（8-10.5 μ m）的IR光电二极管（x近似于0.22），探测率D* = 2.7 × 0.10（10）cmW（-1）Hz（1/2）（T = 80 K），对于中波长（3-5 μ m）的光电二极管，噪声等效温差NRTD近似于20 mK。
The properties of thin CdTe cap layers grown using the hot-wall epitaxy (HWE) method under low-temperature technological conditions (T = 360 nm are continuous and possess effective protective properties in application to Hg1-xCdxTe/CdZnTe IR detectors. The manufactured photodiode detectors demonstrate relatively good parameters: the detectivity D* = 2.7 x .10(10) cmW(-1)Hz(1/2) (T = 80 K) for the long-wave range (8-10.5 mu m) IR photodiodes (x approximate to 0.22) and noise-equivalent temperature difference NRTD approximate to 20 mK for mid-wavelength (3-5 mu m) photodiodes.