The effect of growth condition on graphene growth via Cu-assisted plasma reduction and restoration of graphene oxide
The effect of growth condition on graphene growth via Cu-assisted plasma reduction and restoration of graphene oxide
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DOI：
10.7567/1347-4065/aaef93
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发表时间：
2018-11
影响因子：
1.5
通讯作者：
Seiji Obata;K. Saiki
中科院分区：
文献类型：
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作者：
Seiji Obata;K. Saiki
石墨烯是一种单层石墨片，具有许多吸引人的特性，有望在各个领域取代传统材料。对于石墨烯的工业应用，强烈需要在任意衬底上的高通量合成方法。通过氧化石墨烯（GO）的化学剥离被认为是用于高通量合成的合适方法。然而，还原的GO的结晶度低得不可接受。虽然我们发现用Cu催化剂的等离子体处理在介电衬底上从GO产生具有高结晶度的石墨烯，但生长参数的影响尚不清楚。在这里，我们研究了该过程中CH4和H2的气体比例对石墨烯结晶度的影响。通过优化气体比例，我们成功地还原和恢复了GO，其迁移率增加到9.0 × 102 cm 2 V−1 s−1。
Graphene, a monolayer sheet of graphite, shows plenty of attractive properties and has been expected to replace conventional materials in various fields. For the industrial application of graphene, a high throughput synthesis method on arbitrary substrates is strongly required. Chemical exfoliation via graphene oxide (GO) is thought to be a suitable method for the high throughput synthesis. However, the crystallinity of reduced GO is unacceptably low. Although we found that the plasma treatment with Cu catalyst yields graphene with high crystallinity from GO on a dielectric substrate, the effect of the growth parameter has been unclear. Here, we investigated the effect of the gas ratio of CH4 and H2 in this process on the crystallinity of graphene. By optimizing the gas ratio, we succeeded in reducing and restoring GO to the extent that its mobility increased to 9.0 × 102 cm2 V−1 s−1.