High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation
High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation
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DOI：
10.1103/physrevapplied.6.044016
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发表时间：
2016-10-25
影响因子：
4.6
通讯作者：
Simmons, M. Y.
中科院分区：
文献类型：
--
作者：
House, M. G.;Bartlett, I.;Simmons, M. Y.
我们报告了一个高灵敏度的半导体电荷传感器的基础上耦合到一个单一的引线量子点的发展，旨在最大限度地减少可扩展的量子计算架构的电荷传感器的几何要求。采用原子光刻技术在Si：P中制备了量子点，并利用射频反射仪测量了量子点的电荷跃迁。第二个量子点有两个引线，放置在42 nm以外，既作为传感器测量的电荷，又作为传统的rf单电子晶体管（rf SET），用于比较电荷检测灵敏度。我们证明了灵敏度相当于550纳秒的集成时间检测到一个单一的电荷与信号噪声比为1的集成时间为55纳秒的射频SET相比。这种级别的灵敏度适用于量子信息应用中的快速（< 15 μ s）单自旋读出，与rf SET相比，几何足迹显著减少。
We report the development of a high-sensitivity semiconductor charge sensor based on a quantum dot coupled to a single lead designed to minimize the geometric requirements of a charge sensor for scalable quantum-computing architectures. The quantum dot is fabricated in Si:P using atomic precision lithography, and its charge transitions are measured with rf reflectometry. A second quantum dot with two leads placed 42 nm away serves as both a charge for the sensor to measure and as a conventional rf single-electron transistor (rf SET) with which to make a comparison of the charge-detection sensitivity. We demonstrate sensitivity equivalent to an integration time of 550 ns to detect a single charge with a signal-to-noise ratio of 1 compared with an integration time of 55 ns for the rf SET. This level of sensitivity is suitable for fast (< 15 mu s) single-spin readout in quantum-information applications, with a significantly reduced geometric footprint compared to the rf SET.