Resonant Raman scattering and photoluminescence studies of porous silicon membranes
Resonant Raman scattering and photoluminescence studies of porous silicon membranes
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多孔硅膜的共振拉曼散射和光致发光研究
DOI：
10.1063/1.362491
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
W. Lang
中科院分区：
文献类型：
--
作者：
S. Guha;P. Steiner;W. Lang
在孔隙率约为70%的55 μm厚多孔硅（PS）膜上进行拉曼散射测量，作为激发波长的函数。观察到随着激发波长的增加，Si-Si声子峰变窄。我们将此归因于激发能与PS中纳米晶体的电子态的共振。我们从声子带的移动和加宽估计了硅粒子的尺寸。接下来通过在300和500 °C下退火样品使吸收带边缘蓝移。观察到纳米结构随着粒径减小而塌陷。光致发光（PL）光谱表现出退火后的PL带的红移。我们还估计的PL峰的硅颗粒的大小。
Raman scattering measurements as a function of excitation wavelength are conducted on a 55‐μm‐thick porous silicon (PS) membrane of an approximate porosity of 70%. A narrowing of the Si–Si phonon peak with increasing excitation wavelength is observed. We attribute this to a resonance of the excitation energy with the electronic states of nanocrystallites in PS. We estimate the size of silicon particles from the shift and broadening of the phonon band. The absorption band edge is next blue shifted by annealing the sample at 300 and 500 °C. A collapse of the nanostructure with a decrease in particle size is observed. The photoluminescence (PL) spectra exhibit a red shift of the PL band upon annealing. We also estimate the size of silicon particles from the PL peak.