Development of persistent phosphor of Eu2+ doped Ba2SiO4 by Er3+ codoping based on vacuum referred binding energy diagram
Development of persistent phosphor of Eu2+ doped Ba2SiO4 by Er3+ codoping based on vacuum referred binding energy diagram
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DOI:
10.1016/j.optmat.2018.07.021
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发表时间:
2018-10-01
影响因子:
3.9
通讯作者:
Tanabe, Setsuhisa
中科院分区:
文献类型:
--
作者:
Asami, Kazuki;Ueda, Jumpei;Tanabe, Setsuhisa
We have developed the Ba2SiO4: Eu2+-Er3+ persistent phosphor. The vacuum referred binding energy (VRBE) diagram of the Ba2SiO4 host with the 4f ground states of divalent and trivalent lanthanide ions in the host band gap was constructed from the obtained spectroscopic data and the Dorenbos's procedure. From the constructed diagram, the VRBE values of the conduction band (CB) bottom and valence band (VB) top were estimated to be -0.66 and -8.27 eV, respectively. From the energy gap between the CB bottom and 4f ground states of divalent lanthanide ions, we selected the Er3+ ion as an efficient co-dopant because the trap depth was estimated to be 0.64 eV, suitable for improving the persistent luminescence duration. The Eu2+-Er3+-codoped sample showed persistent luminescence intensity of over 0.32 mcd/m(2) for 7 h duration. The initial persistent luminance intensity of the Eu2+-2%Er3+-codoped sample was found to be 250 times stronger than that of the only Eu2+-doped sample.