Growth mode control of the free carrier density in SrTiO3−δ films
Growth mode control of the free carrier density in SrTiO3−δ films
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DOI：
10.1063/1.2798385
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发表时间：
2006-04
影响因子：
3.2
通讯作者：
A. Ohtomo;H. Hwang
中科院分区：
文献类型：
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作者：
A. Ohtomo;H. Hwang
我们研究了脉冲激光沉积SrTiO 3 −δ同质外延薄膜的生长动力学和电子性质。我们发现，决定生长模式的两个主要因素是表面结晶和氧化的动力学。当匹配时，可以获得数百个单位单元的持续二维逐层生长。通过调整这些动力学因素，氧空位可以被冻结在薄膜中，从而允许在金属-绝缘体过渡期间进行受控的系统掺杂。金属薄膜可以生长，表现出霍尔迁移率高达25000平方厘米scinVs。
We have studied the growth dynamics and electronic properties of SrTiO3−δ homoepitaxial films by pulsed laser deposition. We find that the two dominant factors determining the growth mode are the kinetics of surface crystallization and of oxidation. When matched, persistent two-dimensional layer-by-layer growth can be obtained for hundreds of unit cells. By tuning these kinetic factors, oxygen vacancies can be frozen in the film, allowing controlled, systematic doping across a metal-insulator transition. Metallic films can be grown, exhibiting Hall mobilities as high as 25000cm2∕Vs.