Transition metal oxides as charge injecting layer for admittance spectroscopy

Transition metal oxides as charge injecting layer for admittance spectroscopy
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DOI:
10.1063/1.2936301
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发表时间:
2008-05-26
影响因子:
4
通讯作者:
Kowalsky, W.
Kowalsky, W.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Hoping, M.;Schildknecht, C.;Kowalsky, W.

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Admittance spectroscopy is a simple yet powerful tool to determine the carrier mobility of organic compounds. One requirement is to have an Ohmic contact for charge injection. By employing a thin interfacial layer of tungsten oxide, or molybdenum oxide we have found a possibility to efficiently inject holes into organic materials with a deep highest occupied molecular orbital level down to 6.3 eV. These results considerably enhance the application range of the admittance spectroscopy method. The measured data are in excellent agreement with data obtained by the time-of-flight technique. (C) 2008 American Institute of Physics.