Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates
Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates
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DOI：
10.1143/jjap.49.04da10
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发表时间：
2010-01-01
影响因子：
1.5
通讯作者：
Zaima, Shigeaki
中科院分区：
文献类型：
--
作者：
Nakatsuka, Osamu;Tsutsui, Norimasa;Zaima, Shigeaki
我们研究了在绝缘体上硅 (SOI) 衬底上外延生长的未掺杂 Ge1-xSnx 层的载流子迁移率和浓度行为。霍尔测量揭示了由与Ge1-xSnx层中浓度高达10(18)cm(-3)的空位缺陷相关的受主能级激发的空穴的传导。通过减少杂质带中的平行传导分量来估计价带中载流子迁移率和浓度的温度依赖性。 Sn含量低于4.0%的掺入几乎不会降低异质外延Ge1-xSnx层的空穴迁移率。相反，与在相同生长和退火条件下形成的Ge层相比，通过掺入Sn降低Ge1-xSnx层的载流子浓度，Ge1-xSnx层的迁移率得到改善。该结果表明，将Sn掺入Ge中会由于Sn-空位对的形成而降低电活性空位缺陷的空穴浓度。 (C) 2010 日本应用物理学会
We have investigated the behaviors of the carrier mobility and concentration of the undoped Ge1-xSnx layers epitaxially grown on silicon-on-insulator (SOI) substrates. Hall measurement revealed the conduction of holes excited from acceptor levels related to vacancy defects whose concentration was as high as 10(18) cm(-3) in Ge1-xSnx layers. The temperature dependences of the carrier mobility and concentration in the valence band was estimated by reducing the parallel conduction component in the impurity band. The incorporation of Sn at a content lower than 4.0% hardly degraded the hole mobility of heteroepitaxial Ge1-xSnx layers. In contrast, the mobility of the Ge1-xSnx layers was improved by reducing the carrier concentration of the Ge1-xSnx layers by Sn incorporation compared with that of the Ge layer formed under the same growth and annealing conditions. This result suggests that the incorporation of Sn into Ge leads to reducing the hole concentration of the electrically active vacancy defects due to the formation of Sn-vacancy pairs. (C) 2010 The Japan Society of Applied Physics