An effect of precursor concentrations on the photodetection capabilities of CdS thin films for high-efficiency visible-light photodetector applications
An effect of precursor concentrations on the photodetection capabilities of CdS thin films for high-efficiency visible-light photodetector applications
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DOI：
10.1007/s00339-020-04067-3
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发表时间：
2020-12-01
影响因子：
2.7
通讯作者：
AIFaify, S.
中科院分区：
文献类型：
--
作者：
Devi, M. Dharani;Juliet, A. Vimala;AIFaify, S.
采用不同浓度的氯化镉和硫脲分别作为Cd源和S源，在450℃下将光导CdS薄膜涂覆在玻璃表面。喷涂后的CdS薄膜呈六角形结晶，沿（0 0 2）面取向，附着力好。所有薄膜在可见光区具有较高的光吸收，光学带隙值在2.39 ~ 2.43 eV范围内。前驱体的变化改变了薄膜的表面形态。形成的晶粒均匀分布在基体上，在0.15 M浓度下高度团聚。波段间发射和缺陷相关的发射报告使用光致发光（PL）测量。该器件具有较高的光敏度0.4 A/W，探测率为8.46 × 10(10) Jones，外量子效率（EQE）为140%，上升时间约为0.2 s，衰减时间约为0.3 s。这些结果表明，采用一种简单、低成本的制备方法制备的CdS薄膜是可见光探测器应用的潜在候选者。
Photo-conducting CdS films were coated on glass at 450 degrees C using cadmium chloride and thiourea as Cd and S sources, respectively, with different concentrations. The sprayed CdS films are crystallized in the hexagonal structure and orienting along (0 0 2) plane with good adherence. All the films have high optical absorption in the visible region showing optical bandgap values in the range of 2.39-2.43 eV. The variation of precursor alters the surface morphology of the films. The formed grains are uniformly spread over the substrate and highly agglomerated at 0.15 M concentration. Band to band emission and defect-related emission are reported using photoluminescence (PL) measurements. The CdS device shows relatively high photosensitivity of 0.4 A/W, detectivity of 8.46 x 10(10) Jones, external quantum efficiency (EQE of 140%) with a rise time about 0.2 s and decay time about 0.3 s. These results propose that the CdS thin films are potential candidates for the visible photo-detector applications prepared using an easy and low-cost fabrication method.