Stable and High-Performance Indium Oxide Thin-Film Transistor by Ga Doping
Stable and High-Performance Indium Oxide Thin-Film Transistor by Ga Doping
复制标题
DOI：
10.1109/ted.2016.2518703
复制
发表时间：
2016-03-01
影响因子：
3.1
通讯作者：
Jang, Jin
中科院分区：
文献类型：
--
作者：
Kim, Youn Goo;Kim, Taehun;Jang, Jin
用非晶硅代替薄膜晶体管（TFT）和大面积电子器件的研究一直受到昂贵的真空加工铟镓锌氧化物（IGZO）的推动。尽管被广泛研究，但其性能仍然需要改进，并且已经测试了大量其他材料。虽然铟锌氧化物、IGZO、铟锌锡氧化物（ZTO）和ZTO已被广泛研究，但掺镓氧化铟（IGO）尚未受到重视。在这里，我们报道了使用自旋涂覆AlOx栅介质的简单且经济有效的自旋涂覆IGO TFT。我们实现了超过50 cm(2)/Vs的高迁移率和高稳定性。通过透射电子显微镜、x射线衍射、x射线光电子能谱、拉曼光谱、原子力显微镜和场效应测量对薄膜进行了研究。分析显示结晶度、流动性和稳定性之间有很强的依赖性。所有tft均表现出优异的操作性能，对于10% ga掺杂的InOx具有冠军特性，其迁移率为52.6 cm(2)/Vs， ON/OFF比为10(8)，V-TH变化为
Research on a replacement of amorphous silicon for a thin-film transistor (TFT) and large area electronics has been driven by costly vacuum processed indium-gallium-zinc oxide (IGZO). Even though widely studied, the performances still require improvement, and a wide number of other materials have been tested. While indium-zinc oxide, IGZO, indium-zinc-tin oxide (ZTO), and ZTO have been widely investigated, gallium-doped indium oxide (IGO) has not been under highlight. Here, we report the use of simple and cost effective spin-coated IGO TFT using spin-coated AlOx gate dielectric. We achieved high mobility over 50 cm(2)/Vs and high stability. The thin films are studied by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectra, atomic force microscopy, and field-effect measurements. Analyses reveal the strong dependence between crystallinity, mobility, and stability. All TFTs show excellent operation, with champion characteristics for the 10% Ga-doped InOx, revealing a mobility of 52.6 cm(2)/Vs, ON/OFF ratios of 10(8), and V-TH variation of