Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
复制标题
通过聚焦离子束对 SiO2 进行剂量依赖性蚀刻选择性
DOI：
10.1143/jjap.42.1855
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发表时间：
2003
影响因子：
1.5
通讯作者：
M. Miyao
中科院分区：
文献类型：
--
作者：
T. Sadoh;H. Eguchi;A. Kenjo;M. Miyao
研究了40keV Si2+聚焦离子束(FIBS)辐照下SiO_2薄膜的刻蚀特性。缓冲HF中的刻蚀速率随剂量的增加(8×1013~1×1015 cm-2)而增加，当剂量超过临界值(1×1015 cm-2)时，刻蚀速率降低。辐照区域对非辐照区域的刻蚀速率的最大选择性约为14，这是在临界剂量下获得的。数值模拟表明，在此临界剂量下，SiO_2中的所有Si原子都发生了位移。提出了一种简单的刻蚀模型，该模型考虑了空位对刻蚀的促进作用和注入硅原子对刻蚀的抑制作用。该模型定量地解释了实验所获得的刻蚀特性。
The dose-dependent etching characteristics of SiO2 films irradiated with 40 keV Si2+ focused ion beams (FIBs) were comprehensively investigated. The etching rate in a buffered HF increased with increasing dose (8 ×1013–1 ×1015 cm-2), however it decreased for doses exceeding a critical value (1 ×1015 cm-2). The maximum selectivity of the etching rate of the irradiated region to the nonirradiated region was about 14, which was obtained for irradiation with the critical dose. The numerical simulation indicated that all of the Si atoms in SiO2 were displaced by irradiation with this critical dose. A simple model for the etching characteristics was proposed, in which the enhancement of etching by vacancies and the retardation of etching by implanted Si atoms were considered. The etching characteristics obtained by the experiments were quantitatively explained by the model.