Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy
Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy
复制标题
通过分子束外延在蓝宝石衬底上生长热退火晶圆级 h-BN 薄膜
DOI：
10.1063/5.0002101
复制
发表时间：
2020
影响因子：
4
通讯作者：
X. Q. Wang
中科院分区：
文献类型：
--
作者：
F. Liu;X. Rong;Y. Yu;T. Wang;B. W. Sheng;J. Q. Wei;S. F. Liu;J. J. Yang;F. Bertram;F. J. Xu;X. L. Yang;Z. H. Zhang;Z. X. Qin;Y. T. Zhang;B. Shen;X. Q. Wang
研究了高温退火(HTA)对蓝宝石衬底上生长的h-BN薄膜结晶质量的影响。结果表明，常规分子束外延生长的BN由于生长温度低于1000 °C而无序生长，在1700 °C的温度下进行热处理，可以得到晶片尺度上热力学稳定的h-BN晶体，增强了原子在原生BN薄膜中的扩散，降低了结构缺陷密度。X-射线衍射、拉曼散射和原子力显微镜测量证实了h-BN的结晶。这项工作表明，HTA是一种简单而有效的方法来获得晶片尺寸的h-BN薄膜，在下一代二维器件和柔性III-氮化物光电子器件中具有广泛的潜在应用。
The effect of high temperature annealing (HTA) on crystalline quality improvement of h-BN films grown on sapphire substrates has been investigated. It is found that BN grown using conventional molecular beam epitaxy is disordered due to the growth temperature below 1000 °C. By annealing at a temperature of 1700 °C, thermodynamically stable crystalline h-BN could be obtained at wafer scale, where diffusion of atoms in the as-grown BN film is enhanced and the structural defect density decreases. The crystalline h-BN has been confirmed by x-ray diffraction, Raman scattering, and atomic force microscopy measurements. This work demonstrates that HTA is a simple and effective way to achieve wafer-scale crystalline h-BN films, which have numerous potential applications in next-generation two-dimensional devices and flexible III-nitride optoelectronic devices.