Patterning solution-processed organic single-crystal transistors with high device performance
Patterning solution-processed organic single-crystal transistors with high device performance
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DOI：
10.1063/1.3608793
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发表时间：
2011-06-01
期刊：
影响因子：
1.6
通讯作者：
Tsukagoshi, Kazuhito
中科院分区：
文献类型：
--
作者：
Li, Yun;Liu, Chuan;Tsukagoshi, Kazuhito
We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (mu(FET)) of up to 3.5 cm(2)/V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of mu(FET) of organic crystal transistors was caused by contact resistance. Further improvement of the device with higher mu(FET) with smaller variation can be expected when lower and more uniform contact resistance is achieved. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3608793]
