Rectangular Polysilicon Nanowires by Top-Down Lithography, Dry Etch and Metal-Induced Lateral Crystallization
Rectangular Polysilicon Nanowires by Top-Down Lithography, Dry Etch and Metal-Induced Lateral Crystallization
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DOI：
10.1149/2.011203esl
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发表时间：
2012-03
影响因子：
--
通讯作者：
K. Sun;M. Hakim;P. Ashburn
中科院分区：
文献类型：
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作者：
K. Sun;M. Hakim;P. Ashburn
在这项工作中，我们展示了一个低温多晶硅纳米线的制造过程中使用非晶硅沉积在氧化物柱，各向异性反应离子刻蚀和金属诱导横向结晶（MILC）。所制备的纳米线为矩形，宽度和高度约为100 nm。MILC在低至450 ℃的温度下成功实现，使该工艺与玻璃基板兼容，因此适用于低成本的一次性生物传感器。在480 ℃和450 ℃下退火15小时，分别获得4.1 µm和0.8 µm的结晶长度。
In this work, we demonstrate a low temperature polysilicon nanowire fabrication process using amorphous silicon deposition over an oxide pillar, anisotropic reactive ion etch and metal-induced lateral crystallization (MILC). The fabricated nanowires are rectangular, with a width and height of around 100 nm. MILC is successfully achieved at temperatures down to 450oC, making the process compatible with glass substrates and hence suitable for low cost, disposable biosensors. Crystallisation lengths of 4.1 µm and 0.8 µm are obtained for 15 hour anneals at 480oC and 450oC, respectively.