Surface modification of SiC substrates via direct fluorination to promote adhesion of electroless-deposited Ni film
Surface modification of SiC substrates via direct fluorination to promote adhesion of electroless-deposited Ni film
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通过直接氟化对 SiC 衬底进行表面改性以提高化学沉积镍膜的附着力
DOI：
10.1016/j.jfluchem.2022.110012
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发表时间：
2022
影响因子：
1.9
通讯作者：
Yonezawa Susumu
中科院分区：
文献类型：
--
作者：
Namie Masanari;Nishimura Fumihiro;Kim Jae-Ho;Yonezawa Susumu
为了提高碳化硅（SiC）衬底与化学镀镍薄膜之间的附着力，本研究重点研究了在100-300°C和380 Torr下，通过直接氟化（使用F2gas） 10-120 min对SiC衬底进行改性的方法。在氟化过程中，样品的表面形貌在≥200°C的温度下发生了显著变化。然而，在200°C下氟化的SiC表面由于形成疏水层（如包含cf2和cf3基团的层）而与化学镀镍膜粘附不良。在高于300℃的温度下，碳化硅表面发生疏水性基团的cf4气化。这导致具有高表面粗糙度和亲水性的SiC衬底牢固地粘附在化学镀镍薄膜上。当反应温度为300℃，反应时间为30 min或更长时，镀层与基体的粘附性较强。F2直接氟化对SiC衬底进行亲水性和粗化处理，可以提高SiC衬底与化学沉积Ni膜的结合强度。
To improve the adhesion between a silicon carbide (SiC) substrate and an electroless-plated Ni film, this study focused on the modification of a SiC substrate via direct fluorination (using F2gas) at 100–300°C and 380 Torr for 10–120 min. During fluorination, the surface topography of the samples changed markedly at temperatures ≥200°C. However, the SiC surface fluorinated at 200°C adhered poorly to the electroless-plated Ni films because of the formation of hydrophobic layers such as those comprising CF2and CF3groups. At temperatures greater than 300°C, CF4gasification of hydrophobic groups occurred on the SiC surface. This resulted in a SiC substrate with high surface roughness and hydrophilicity that strongly adhered to an electroless-plated Ni film. When the reaction temperature was 300°C and the reaction time was 30 min or longer, the plating adhered strongly to the substrate. The adhesion strength between the SiC substrate and the electroless-deposited Ni film could be enhanced by hydrophilizing and roughening the SiC substrate through direct fluorination with F2.