The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin films
The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin films
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氮离子注入对ZnSe薄膜结构、光学和电学性能的影响
DOI：
10.1088/0268-1242/21/12/027
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
K. Nair
中科院分区：
文献类型：
--
作者：
S. Venkatachalam;D. Mangalaraj;S. Narayandass;R. Kesavamoorthy;P. Magudapathy;B. Sundaravel;S. Kalavathi;K. Nair
在3 × 10 - 5 Torr的真空下，使用真空蒸发技术将硒化锌薄膜沉积在清洁良好的玻璃和硅衬底上。这些薄膜被注入了质量分析的75 keV N+离子，剂量范围从1014到1016离子cm−2。采用卢瑟福背散射（RBS）、掠入射X射线衍射（GIXRD）、原子力显微镜（AFM）、拉曼散射、光学透过率和I-V测试等方法研究了沉积态和注氮态薄膜的成分、微结构、表面粗糙度、光学带隙和电学性能。RBS分析表明，沉积和氮注入薄膜的成分接近化学计量比。所沉积的膜的厚度计算为230 nm。沉积态和注氮态薄膜的结构均为立方结构。在AFM分析中，发现表面粗糙度随着氮离子剂量的增加而增加。在光学研究中，光学带隙值随着N+剂量的增加而减小。所制备的器件在可见光区表现出非常好的响应。
Zinc selenide thin films were deposited onto well-cleaned glass and silicon substrates using the vacuum evaporation technique under a vacuum of 3 × 10−5 Torr. These films were implanted with mass-analysed 75 keV N+ ions at different doses ranging from 1014 to 1016 ions cm−2. The composition, microstructure, surface roughness, optical bandgap and electrical properties of the as-deposited and nitrogen-implanted films were studied by Rutherford backscattering (RBS), grazing incidence x-ray diffraction (GIXRD), atomic force microscopy (AFM), Raman scattering, optical transmittance and I–V measurements. The RBS analysis indicates that the composition of the as-deposited and nitrogen-implanted films is nearly stoichiometric. The thickness of the as-deposited film is calculated as 230 nm. The structure of the as-deposited and nitrogen-implanted thin films is cubic. In the AFM analysis, the surface roughness is found to increase with an increasing dose of nitrogen ions. In the optical studies, the optical bandgap value decreases with increase of the N+ dose. The prepared device exhibits a very good response in the visible region.