Hydrogen-Defect Termination in SnO for p-Channel TFTs
Hydrogen-Defect Termination in SnO for p-Channel TFTs
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DOI：
10.1021/acsaelm.0c00149
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发表时间：
2020-04-28
影响因子：
4.7
通讯作者：
Nomura, Kenji
中科院分区：
文献类型：
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作者：
Lee, Alex W.;Le, Dong;Nomura, Kenji
开发高性能的p沟道氧化物薄膜晶体管(TFT)和实用的氧化物TFT互补电路是氧化物电子学面临的最持久的挑战，也是未来氧化物器件技术需要克服的主要障碍。氧化锡SnO具有相当高的空穴载流子迁移率(大于1 cm(2)V(-1))和低成本的可加工性，被认为是p型沟道氧化物TFT有源层的候选材料之一。然而，高密度亚隙缺陷破坏了其在电子器件方面的巨大潜力，阻碍了SnO基高性能p沟道氧化物TFT的发展。为了提高p沟道氧化物TFT的器件性能，我们提出了SnO的氢缺陷端接方法。在氢气气氛中，360℃纯NH_3气氛中的热退火提供了良好的TFT特性，饱和迁移率接近1.41.8 cm(2)V~(-1)S(-1)，通断电流比接近10(5)，这是由于起源于氧空位的亚能隙空穴陷阱的氢终止。提出了一种由p沟道SnO和n沟道a-IGZO TFT组成的互补逆变器，其最大电压增益接近50。这一目前的成就是朝着建立低成本下一代氧化物电子产品迈出的重要一步。
Developing high-performance p-channel oxide thin-film transistor (TFT) and practical oxide TFT-based complementary circuits is the most persistent challenge for oxide electronics and a major hurdle for future oxide device technology to overcome. Tin monoxide, SnO, is known as one of the promising candidates for an active layer of p-channel oxide TFT, owing to its reasonably high hole carrier mobility (over 1 cm(2) V(-1 )s(-1)) and low-cost processability. However, high-density subgap defect spoils its high potential for electronic devices and hinders the development of SnO-based high-performance p-channel oxide TFTs. Here, we present hydrogen-defect termination for SnO to improve the device performance of p-channel oxide TFT. Thermal annealing in hydrogen ambient using a pure NH3 at 360 degrees C offers good TFT characteristics with the saturation mobilities of similar to 1.4-1.8 cm(2) V-1 s(-1) and an on-to-off current ratio of similar to 10(5) because of the hydrogen termination of the subgap hole trap originating from the oxygen vacancy. A complementary inverter comprising p-channel SnO and n-channel a-IGZO TFTs was demonstrated with a maximum voltage gain of similar to 50. This present achievement is an important step toward building low-cost next-generation oxide electronics.