The crystal orientation relation and macroscopic surface roughness in hetero-epitaxial graphene grown on Cu/mica
The crystal orientation relation and macroscopic surface roughness in hetero-epitaxial graphene grown on Cu/mica
复制标题
DOI：
10.1088/0957-4484/25/18/185602
复制
发表时间：
2014-03
期刊：
影响因子：
3.5
通讯作者：
Junlei Qi;Junlei Qi;K. Nagashio;T. Nishimura;A. Toriumi
中科院分区：
文献类型：
--
作者：
Junlei Qi;Junlei Qi;K. Nagashio;T. Nishimura;A. Toriumi
石墨烯电子产品对衬底上的清洁、平坦和取向识别的石墨烯有很高的需求。在这项研究中，异质外延石墨烯生长Cu（111）/云母（001）的化学气相沉积进行了研究，以检查顶栅绝缘体的石墨烯研究的适用性，以及石墨烯沟道的研究，通过转移到SiO2/Si衬底上的石墨烯。调整石墨烯生长条件后，石墨烯/Cu/云母衬底的表面粗糙度为10.34 nm，平均平整面积为100 μm2。石墨烯/Cu/云母衬底中石墨烯的取向可以通过Cu的六方空隙形态来识别。此外，我们证明了在SiO2/Si衬底上转移的石墨烯中的相对高的迁移率为4500 cm 2 V−1 s−1。这些结果表明，本发明的石墨烯/Cu/云母衬底可用于石墨烯上的顶栅绝缘体研究。
Clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001) by chemical vapor deposition is investigated to check the applicability for top-gate insulator research on graphene, as well as graphene channel research, by transferring graphene on to SiO2/Si substrates. After adjusting the graphene growth conditions, the surface roughness of the graphene/Cu/mica substrate and the average smoothed areas are ∼0.34 nm and ∼100 μm2, respectively. The orientation of graphene in the graphene/Cu/mica substrate can be identified by the hexagonal void morphology of Cu. Moreover, we demonstrate a relatively high mobility of ∼4500 cm2 V−1 s−1 in graphene transferred on the SiO2/Si substrate. These results suggest that the present graphene/Cu/mica substrate can be used for top-gate insulator research on graphene.