3D island nucleation behaviour on high index substrates

3D island nucleation behaviour on high index substrates
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DOI：
10.1016/s0921-5107(99)00568-1
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发表时间：
2000-05-01
期刊：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
影响因子：
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通讯作者：
Main, PC
Main, PC
中科院分区：
其他
文献类型：
--
作者：
Sanguinetti, S;Chiantoni, G;Main, PC

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我们提供了在（N11）GaAs衬底上生长的InAs外延层的实验数据，表明衬底取向影响量子点自组装开始的临界厚度。所研究的样品通过光致发光测量来表征。我们观察到自组装临界覆盖率随着基质米勒指数N的增加而降低。观察到的行为是由使用高指数基质引起的岛内应变松弛抑制。(C) 2000 Elsevier Science S.A.版权所有
We present experimental data on InAs epitaxial layers grown on (N11)GaAs substrates showing that the substrate orientation affects the critical thickness for the onset of quantum dot self-assembling. The samples under investigation were characterised via photoluminescence measurements. We observed a decrease of self-assembling critical coverage with increasing Miller index N of the substrate. The observed behaviour is induced in-island strain relaxation inhibition caused by the use of high index substrates for the growth. (C) 2000 Elsevier Science S.A. All rights reserved.