Fabricating a silicon nanowire by using the proximity effect in electron beam lithography for investigation of the Coulomb blockade effect
Fabricating a silicon nanowire by using the proximity effect in electron beam lithography for investigation of the Coulomb blockade effect
复制标题
利用电子束光刻中的邻近效应制造硅纳米线以研究库仑封锁效应
DOI：
10.1088/0957-4484/22/3/035302
复制
发表时间：
2011
期刊：
影响因子：
3.5
通讯作者：
Xinfan Huang
中科院分区：
文献类型：
--
作者：
Xiangao Zhang;Zhonghui Fang;Kunji Chen;Jun Xu;Xinfan Huang
本文提出了一种利用低加速电压系统中电子束光刻的接近效应来制造硅纳米线的方法，即在两个对称楔形之间夹一个菱形的曝光模式。通过改变菱形的数目来考察重现性。在高掺杂绝缘体上的硅晶片上构造了一种硅纳米线器件，用于测量电子输运特性。在高达150k时，观察到电流-电压曲线的显著非线性行为。电流对漏极电压和后门电压的依赖性在5.4 K时显示出库仑阻塞振荡，揭示了纳米线中自然形成的库仑岛。讨论了库仑岛的形成机理。
We present an approach to fabricate a silicon nanowire relying on the proximity effect in electron beam lithography with a low acceleration voltage system by designing the exposure patterns with a rhombus sandwiched between two symmetric wedges. The reproducibility is investigated by changing the number of rhombuses. A device with a silicon nanowire is constructed on a highly doped silicon-on-insulator wafer to measure the electronic transport characteristics. Significant nonlinear behavior of current–voltage curves is observed at up to 150 K. The dependence of current on the drain voltage and back-gate voltage shows Coulomb blockade oscillations at 5.4 K, revealing a Coulomb island naturally formed in the nanowire. The mechanism of formation of the Coulomb island is discussed.