Observation of negative electron affinity in low-voltage discharging boron-doped polycrystalline diamond
Observation of negative electron affinity in low-voltage discharging boron-doped polycrystalline diamond
复制标题
低压放电掺硼多晶金刚石负电子亲和势的观察
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
S. Yamasaki
中科院分区：
文献类型：
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作者：
T. Sakai;T. Ono;N. Sakuma;H. Yoshida;Mariko Suzuki;D. Takeuchi;S. Kono;S. Yamasaki
对掺硼（B）多晶金刚石进行了全光产额谱（TPYS）测量，发现其在辉光放电时具有极低的阴极下降电压（Vc）。在钼（Mo）衬底上生长的B掺杂金刚石膜在用少量氢添加到氩气（Ar +0.03%H2）的氢化之后显示出约43 V的Vc。该Vc值几乎是不含金刚石的Mo基体的1/3。在微波氢等离子体中氢化后的金刚石的TPY谱在4.5eV处显示出明显的开始，这低于金刚石的带隙能量（5.47eV）。这归因于负电子亲和势（NEA），导致电子亲和势为−1.0 eV。还测定了酸处理条件和Mo的Vc和TPY谱。从这些实验中，取决于表面处理的B掺杂的多晶金刚石的低Vc值与从TPYS测量得到的电子亲合势之间的差异相关。
Total photoyield spectroscopy (TPYS) measurement is applied to boron (B)-doped polycrystalline diamond, which shows an extremely low cathode fall voltage (Vc) in glow discharge operation. The B-doped diamond film grown on a molybdenum (Mo) substrate shows Vc of about 43 V after hydrogenation with a small amount of hydrogen added to argon (Ar + 0.03% H2). This Vc value is almost 1/3 that of the Mo substrate without diamond. The TPY spectrum of the diamond after hydrogenation in microwave hydrogen plasma shows obvious onset at 4.5 eV, which is below the band-gap energy of diamond (5.47 eV). This is attributed to the negative electron affinity (NEA), which results in an electron affinity of −1.0 eV. Vc and TPY spectra are also measured for acid treatment condition and Mo. From these experiments, the low Vc values of B-doped polycrystalline diamond depending on the surface treatment correlate to the difference between electron affinities derived from the TPYS measurements.