Evaluation of Bi defect concentration in LnO1-xFxBiCh2 by scanning tunneling microscopy
Evaluation of Bi defect concentration in LnO1-xFxBiCh2 by scanning tunneling microscopy
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DOI：
10.1088/1742-6596/871/1/012006
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发表时间：
2017-07
期刊：
影响因子：
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通讯作者：
S. Demura;N. Ishida;Y. Fujisawa;H. Sakata
中科院分区：
文献类型：
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作者：
S. Demura;N. Ishida;Y. Fujisawa;H. Sakata
研究了层状BiCh_2基超导体LnO_（1-x）F_xBiCh_2（Ln = La，Ce，Nd，Ch = S，Se）中Bi缺陷的浓度。这些材料通过电子载流子掺杂到BiCh 2层中而显示出超导电性。由于Bi缺陷直接影响载流子浓度，因此对浓度的检查对于评估实际载流子浓度是重要的。本文用扫描隧道显微镜在真实的空间测量了BiCh_2基超导体中Bi缺陷在BiCh_2层上的浓度。我们发现BiSe 2层的样品比BiS 2层的样品具有更少的Bi缺陷。此外，发现Bi缺陷的浓度几乎是恒定的，而与F浓度和Ln离子无关。
We examined a concentration of Bi defects in layered BiCh2 based superconductors LnO1-xFxBiCh2 (Ln = La, Ce, Nd Ch = S, Se). These materials show superconductivity by electron carrier doping into BiCh2 layer. Since Bi defects affect the carrier concentration directly, an examination of the concentration is important to evaluate an actual carrier concentration. In this paper, the concentration of Bi defects on the BiCh2 layers in BiCh2 based superconductors was evaluated by scanning tunneling microscopy measurements in real space. We found the samples with BiSe2 layers have less Bi defects than those with BiS2 layers. Furthermore, the concentration of Bi defects was found to be almost constant regardless of F concentration and Ln ion.