Harmful voltage overshoots due to turn-on behaviour of ESD protections during fast transients
Harmful voltage overshoots due to turn-on behaviour of ESD protections during fast transients
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DOI:
10.1109/eosesd.2007.4401774
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发表时间:
2007-12
期刊:
影响因子:
--
通讯作者:
T. Smedes;N. Guitard
中科院分区:
文献类型:
--
作者:
T. Smedes;N. Guitard
Due to the reaction time of the devices, the rise time of an ESD pulse has a strong effect on the efficiency of a protection network. (vf-)TLP clearly causes different failure modes depending on the rise time. This knowledge is needed to design protections that can handle fast ESD transients.