A comprehensive Monte Carlo calculation of dopant contrast in secondary-electron imaging
A comprehensive Monte Carlo calculation of dopant contrast in secondary-electron imaging
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DOI：
10.1209/0295-5075/82/30006
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发表时间：
2008-05-01
期刊：
影响因子：
1.8
通讯作者：
Rodenburg, J. M.
中科院分区：
文献类型：
--
作者：
Dapor, Maurizio;Inkson, B. J.;Rodenburg, J. M.
在扫描电子显微镜中使用二次电子进行二维掺杂剂映射是用于研究半导体材料和器件中具有高空间分辨率的掺杂剂分布的有用且快速的技术。然而，它还没有得到广泛的应用，因为定量。掺杂剂浓度的阳离子目前缺乏可靠的理论模型。本文通过蒙特卡罗模拟来解决这个问题。我们证明，考虑到电子亲和势的蒙特卡罗模拟计算的二次电子发射从掺杂硅的掺杂对比度可以解释。本文还为掺杂衬度成像中表面效应的存在提供了可靠的理论模型。版权所有（c）EPLA，2008年。
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a useful and rapid technique for studying dopant distributions with high spatial resolution in semiconductor materials and devices. However, it has not yet found widespread application because the quanti. cation of dopant concentrations currently lacks a firm theoretical model. This paper addresses the issue by means of Monte Carlo modelling. We demonstrate that by taking account of the electron affinity in Monte Carlo simulations to calculate the secondary-electron emission from doped silicon the dopant contrast can be explained. This paper also provides a firm theoretical model about the existence of surface effects in dopant contrast imaging. Copyright (c) EPLA, 2008.