Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films
Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films
复制标题
DOI：
10.1063/1.116370
复制
发表时间：
1996-05-20
影响因子：
4
通讯作者：
Ishiwara, H
中科院分区：
文献类型：
--
作者：
Ha, HK;Yoshimoto, M;Ishiwara, H
通过使用我们开发的冷等离子体炬，通过将Ti（OEt）（4）供给到等离子体中，在暴露于空气的基底上沉积TiO 2膜。XPS和X射线分析表明，所有的薄膜是化学计量和无定形的TiO 2，但拉曼光谱表明，在薄膜中存在的短程结晶在350 ℃以上沉积。氢原子进入等离子体后，样品的短程结构由金红石型转变为金红石型。金红石型TiO_2薄膜比金红石型TiO_2薄膜具有更高的击穿电场和更高的介电常数。(C)1996年美国物理学会。
By using the cold plasma torch we developed, TiO2 films were deposited on substrates exposed to air by feeding Ti(OEt)(4) into the plasma. XPS and x-ray analyses revealed that all films were stoichiometric and amorphous TiO2, but Raman spectra indicated the existence-of short-range crystallinity in films deposited above 350 degrees C. The short range structure changed from anatase to rutile by admiring of hydrogen to the plasma. The rutile containing TiO2 film bad a higher breakdown electric field as well as a higher dielectric constant than the anatase containing film. (C) 1996 American Institute of Physics.