Rabi oscillations in a semiconductor quantum dot: Influence of local fields
Rabi oscillations in a semiconductor quantum dot: Influence of local fields
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半导体量子点中的拉比振荡：局部场的影响
DOI：
10.1103/physrevb.70.045320
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发表时间：
2004
影响因子：
3.7
通讯作者：
D. Bimberg
中科院分区：
文献类型：
--
作者：
G. Slepyan;A. Magyarov;S. Maksimenko;A. Hoffmann;D. Bimberg
从理论上研究了电子-空穴偶极-偶极相互作用（局域场）对孤立量子点 (QD) 中激子拉比振荡的影响。对量子点与单色场和超短高斯脉冲的相互作用进行了分析。在光学布洛赫方程的基础上，研究了拉比振荡动力学。因此，我们预测了暴露于单色场的量子点中拉比振荡的分岔和本质上的非简谐状态。拉比振荡周期对量子点去极化的强烈依赖性已经被揭示。对于高斯脉冲，已经表明，作为脉冲峰值强度的函数的最终反转状态表现出阶梯状转变。
The influence of electron-hole dipole-dipole interactions (local fields) on the excitonic Rabi oscillations in an isolated quantum dot (QD) has been theoretically investigated. An analysis for the QD interaction with monochromatic field and ultrashort Gaussian pulse has been performed. On the basis of optical Bloch equations the Rabi oscillation dynamics has been investigated. As a result, the bifurcation and essentially anharmonic regimes in the Rabi oscillations in a QD exposed to the monochromatic field have been predicted. The strong dependence of the period of Rabi oscillations on the QD depolarization has been revealed. For the Gaussian pulse it has been shown that the final state of inversion as a function of the pulse peak strength demonstrates step-like transitions.