Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping
Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping
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DOI：
10.7567/jjap.54.030301
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发表时间：
2015-03-01
影响因子：
1.5
通讯作者：
Fujita, Shizuo
中科院分区：
文献类型：
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作者：
Lee, Sam-Dong;Ito, Yoshito;Fujita, Shizuo
为了增强刚玉结构的氧化镓（α-Ga 2 O3）的热稳定性，我们尝试了铝（Al）掺杂，该氧化镓（α-Ga 2 O3）对于在宽带隙异质结构器件中的使用是有吸引力的，并且适合于带隙和功能工程，但是在高温生长（>500摄氏度）和处理（>550摄氏度）中遭受相变。通过增加Al掺杂浓度来增强膜的热稳定性，并且在其中Al浓度与Ga 2 O3的基本化学组成相比可以忽略不计的最佳掺杂条件下，生长温度和连续热处理温度分别增加到高达650和750摄氏度，而没有显著的β-镓相的出现。在上述掺杂条件下，在800 ℃的生长温度下，Al的夹杂物不可忽略，并且膜组成表示为α-（Al0.2Ga0.8）（2）O-3的合金，但是该膜在高达900 ℃的退火温度下保持为α相。增强的热稳定性拓宽了器件工艺窗口，有助于形成各种高性能器件。(C)2015日本应用物理学会
In order to enhance the thermal stability of corundum-structured gallium oxide (alpha-Ga2O3), which is attractive for use in wide-band-gap heterostructure devices and amenable to band gap and function engineering but suffers from phase transformation in high-temperature growth (>500 degrees C) and treatments (>550 degrees C), we attempted aluminum (Al) doping. The thermal stability of the films was enhanced by increasing the Al doping concentration, and under the best doping conditions where the Al concentration was negligible compared with the basic chemical composition of Ga2O3, the growth and successive thermal treatment temperatures were increased to as high as 650 and 750 degrees C, respectively, without the marked appearance of the beta-gallia phase. Under the doping conditions above, the inclusion of Al was not negligible at the growth temperature of 800 degrees C and the film composition was expressed as an alloy of alpha-(Al0.2Ga0.8)(2)O-3, but this film remained as the a-phase at annealing temperatures up to 900 degrees C. Enhanced thermal stability widens the device process windows, contributing to the formation of various high-performance devices. (C) 2015 The Japan Society of Applied Physics