OPTICAL SECOND-HARMONIC GENERATION INDUCED BY A DC ELECTRIC-FIELD AT THE SI-SIO2 INTERFACE
OPTICAL SECOND-HARMONIC GENERATION INDUCED BY A DC ELECTRIC-FIELD AT THE SI-SIO2 INTERFACE
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DOI：
10.1364/ol.19.001450
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发表时间：
1994-09-15
期刊：
影响因子：
3.6
通讯作者：
MURZINA, TV
中科院分区：
文献类型：
--
作者：
AKTSIPETROV, OA;FEDYANIN, AA;MURZINA, TV
据我们所知，第一次，电场诱导的光学二次谐波产生（SHG）的Si-SiO 2界面的使用的金属氧化物半导体（MOS）结构进行了研究。这种现象的晶体学各向异性的MOS结构进行了研究。实验结果表明，在Si-SiO_2界面施加去电场的MOS技术可以有效地用于研究电致倍频效应。
For what is to our knowledge the first time, electric-field-induced optical second-harmonic generation (SHG) is studied at the Si-SiO2 interface by the use of a metal-oxide-semiconductor (MOS) structure. The crystallographic anisotropy of this phenomenon is studied for MOS structures. Experimental results indicate that the MOS technique of de electric-field application to the Si-SiO2 interface can be effectively used for studying electroinduced effects on SHG.