Accelerating Parameter Extraction of Power MOSFET Models Using Automatic Differentiation
Accelerating Parameter Extraction of Power MOSFET Models Using Automatic Differentiation
复制标题
DOI:
10.1109/tpel.2021.3118057
复制
发表时间:
2021-10
影响因子:
6.7
通讯作者:
Michihiro Shintani;Aoi Ueda;Takashi Sato
中科院分区:
文献类型:
--
作者:
Michihiro Shintani;Aoi Ueda;Takashi Sato
The extraction of the model parameters is as important as the development of compact model itself because simulation accuracy is fully determined by the accuracy of the parameters used. This article proposes an efficient model-parameter extraction method for compact models of power metal-oxide semiconductor field-effect transistors (mosfets). The proposed method employs automatic differentiation (AD), which is extensively used for training artificial neural networks. In the proposed AD-based parameter extraction, gradient of all the model parameters is analytically calculated by forming a graph that facilitates the backward propagation of errors. Based on the calculated gradient, computationally intensive numerical differentiation is eliminated and the model parameters are efficiently optimized. Experiments are conducted to fit current and capacitance characteristics of commercially available silicon carbide mosfet using power mosfet models having 13 model parameters. Results demonstrated that the proposed method could successfully derive the model parameters 3.50× faster than a conventional numerical-differentiation method while achieving the equal accuracy.