Specular spectroscopic scatterometry

Specular spectroscopic scatterometry
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DOI:
10.1109/66.920722
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发表时间:
2001-05
影响因子:
2.7
通讯作者:
Xinhui Niu;Nickhil H. Jakatdar;Junwei Bao;C. Spanos
Xinhui Niu;Nickhil H. Jakatdar;Junwei Bao;C. Spanos
中科院分区:
工程技术4区
文献类型:
--
作者:
Xinhui Niu;Nickhil H. Jakatdar;Junwei Bao;C. Spanos

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散射测量法是少数几种具有原位/在线深度亚微米临界尺寸(CD)和剖面分析潜力的测量候选方法之一。大多数现有的散射计被设计成在周期光栅上测量单一波长的多个入射角。我们通过部署镜面光谱散射法扩展了这个想法。镜面散射法是一种在固定入射角和多波长下测量零级衍射响应的方法。这种机制允许使用现有的薄膜测量设备,如光谱椭偏仪,从一维(1-D)周期结构中准确提取地形轮廓信息。在这项工作中,我们开发了光栅工具包(gtk),它实现了严格耦合波分析(RCWA)的几种变体,以准确有效地模拟一维光栅的衍射行为。利用该封装进行的理论模拟表明,镜面光谱散射测量可以应用于当前的半导体制造技术,并且可以很容易地扩展到0.07-/spl mu/m一代。我们还应用了基于库的剖面提取方法,分别使用0.25和0.18-/spl μ m光刻和蚀刻技术来提取抗蚀和多聚焦曝光矩阵的横截面剖面。CD-SEM, CD-AFM和SSS测量之间的差异进行了讨论和解释。
Scatterometry is one of the few metrology candidates that has true in situ/in-line potential for deep submicrometer critical dimension (CD) and profile analysis. Most existing scatterometers are designed to measure multiple incident angles at a single wavelength on periodic gratings. We extend this idea by deploying specular spectroscopic scatterometry. Specular spectroscopic scatterometry (SS) is designed to measure the zeroth-order diffraction response at a fixed angle of incidence and multiple wavelengths. This mechanism allows the use of existing thin-film metrology equipment, such as spectroscopic ellipsometers, to accurately extract topographic profile information from one-dimensional (1-D) periodic structures. In this work, we developed the grating tool-kit (gtk), which implements several variants of rigorous coupled-wave analysis (RCWA) to accurately and efficiently simulate diffraction behavior of 1-D gratings. Theoretical simulations using this package show that specular spectroscopic scatterometry can be applied in the current semiconductor manufacturing technology, and can be easily extended to the 0.07-/spl mu/m generation. We have also applied a library-based profile extraction methodology to resist and poly focus-exposure matrices patterned using 0.25and 0.18-/spl mu/m lithography and etch technology, respectively, to extract their cross-sectional profiles. Discrepancies between CD-SEM, CD-AFM, and SSS measurements are discussed and explained.