Anti-resonance peak shift due to variation of effective package inductance
Anti-resonance peak shift due to variation of effective package inductance
复制标题
由于有效封装电感的变化而导致的反谐振峰值偏移
DOI：
10.1109/edaps.2013.6724431
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
T. Sudo
中科院分区：
文献类型：
--
作者：
G. Kubo;H. Otsuka;R. Kobayashi;W. Ichimura;S. Kiyoshige;Masahiro Terasaki;T. Sudo
电源完整性是现代CMOS数字系统中的一个严重问题，因为在核心电路中激发的电源噪声会导致逻辑不稳定和电磁辐射。因此，通过考虑从芯片看到的电源分配网络（PDN）的总阻抗，芯片-封装协同设计变得重要。特别是，由于芯片-封装相互作用引起的PDN中的并联谐振峰值引起不希望的电源波动，并导致信号完整性和电磁干扰（EMI）的劣化。在本文中，峰值频率偏移的总PDN阻抗在三个测试芯片具有不同的片上PDN属性时，封装电感的变化进行了观察。
Power integrity is a serious issue in the in the modern CMOS digital systems, because power supply noise excited in core circuits induces logic instability and electromagnetic radiation. Therefore, chip-package co-design is becoming important by taking into consideration the total impedance of power distribution network (PDN) seen from the chip. Especially, parallel resonance peaks in the PDN due to the chip-package interaction induces the unwanted power supply fluctuation, and results in the degradation of signal integrity and electromagnetic interference (EMI). In this paper, peak frequency shift in the total PDN impedance in three test chips with different on-die PDN properties was observed when the package inductance was changed.