Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector
Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector
复制标题
垂直排列良好的 ZnO 纳米线阵列，具有超快的恢复时间，适用于紫外光电探测器
DOI：
10.1007/s00339-012-6886-6
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发表时间：
2012-05-01
影响因子：
2.7
通讯作者：
Gao, Yihua
中科院分区：
文献类型：
--
作者：
Zhang, Xianghui;Han, Xiangyun;Gao, Yihua
采用化学气相沉积一步法在GaN/蓝宝石衬底上生长了结晶良好的氧化锌纳米线阵列，制备压力控制在1000~2500帕之间，获得了最佳取向的纳米线阵列。光致发光研究表明，随着纳米线直径的增加，样品发生红移。在波长为365nm0.3 mW/cm(2)的紫外光照射下，最好的氧化锌阵列的光响应表现为超快三指数上升和双指数衰减，三个常数S分别为0.148、0.064和0.613，两个恢复常数分别为30和270ms。ZnO/GaN异质结势垒可能是导致超快三指数上升和双指数衰减行为的原因。
Well-crystallized ZnO nanowire arrays were grown on GaN/sapphire by one-step chemical vapor deposition under control of the fabrication pressure of 1000-2500 Pa and the best-aligned arrays were obtained at 1000 Pa. A photoluminescence study shows a red shift with nanowire diameter increase. Under 365-nm UV irradiation of 0.3 mW/cm(2), the photoresponse study of the best ZnO arrays shows an ultra-fast tri-exponential rise with three constants of 0.148, 0.064 and 0.613 s, and a bi-exponential decay behavior with two recovery constants of 30 and 270 ms. The ZnO/GaN heterojunction barriers could be responsible for the ultra-fast tri-exponential rise and bi-exponential decay behavior.