Performance enhancement of AlGaN-based 365-nm ultraviolet light-emitting diodes with band-engineering last quantum barrier
Performance enhancement of AlGaN-based 365-nm ultraviolet light-emitting diodes with band-engineering last quantum barrier
复制标题
利用能带工程最后量子势垒增强 AlGaN 基 365 nm 紫外发光二极管的性能
作者：
Longfei He;Wei Zhao;Kang Zhang;Chenguang He;Huanglong Wu;Ningyang Liu;Weidong Song;Zhitao Chen;Shuti Li
