Optical doping: active control of metal-insulator transition in nanowire.
Optical doping: active control of metal-insulator transition in nanowire.
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DOI：
10.1021/nl801350p
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发表时间：
2008-10
期刊：
影响因子：
10.8
通讯作者：
Y. Terada;S. Yoshida;A. Okubo;K. Kanazawa;Maojie Xu;O. Takeuchi;H. Shigekawa
中科院分区：
文献类型：
--
作者：
Y. Terada;S. Yoshida;A. Okubo;K. Kanazawa;Maojie Xu;O. Takeuchi;H. Shigekawa
通过光学掺杂调节一维表面态的能带填充，证明了 In/Si(111) 纳米线中金属-绝缘体转变 (MIT) 的可逆控制。 MIT 的控制是通过调节半填充位置附近表面态的费米能级来实现的，具体取决于界面处引入的载流子密度。我们通过电荷掺杂调节光激发强度，成功实现了 MIT 的可逆主动控制。该方法广泛适用于其他低维系统，使MIT更加可控，适合用于纳米线作为未来纳米级功能器件架构以及纳米级器件间布线的有源元件。
The reversible control of metal-insulator transition (MIT) in In/Si(111) nanowires is demonstrated by tuning the band filling of the one-dimensional surface state by optical doping. The control of MIT is carried out by regulating the Fermi level in the surface state around the half-filled position, depending on the carrier density introduced at the interface. We successfully achieved the reversible and active control of MIT via the charge doping by regulating the intensity of photoexcitation. This method is widely applicable to other low-dimensional systems and makes MIT more controllable and suitable for use in nanowires as an active element in future architectures of nanosized functional devices as well as nanoscale interdevice wiring.