Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE
Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE
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DOI:
10.1016/j.jcrysgro.2012.11.027
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发表时间:
2013-02
影响因子:
1.8
通讯作者:
Shunfeng Li;Xue Wang;M. Mohajerani;S. Fündling;M. Erenburg;Jiandong Wei;H. Wehmann;A. Waag;
中科院分区:
文献类型:
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作者:
Shunfeng Li;Xue Wang;M. Mohajerani;S. Fündling;M. Erenburg;Jiandong Wei;H. Wehmann;A. Waag;