Gas Cluster Ion Beams for Processing New Materials
Gas Cluster Ion Beams for Processing New Materials
复制标题
用于加工新材料的气体团簇离子束
DOI:
10.1142/9789812816696_0003
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发表时间:
1998
期刊:
影响因子:
--
通讯作者:
I. Yamada
中科院分区:
文献类型:
--
作者:
I. Yamada
Irradiation effects of gas cluster ion beams have been studied experimentally and simulated theoretically for various combinations of ion species, energies and materials. It is shown that cluster ion - surface interactions offer new opportunities for surface processing such as very shallow implantation (less than 0.1 mm in Si), very high rate sputtering (two orders of magnitude higher than for monomer ions), lateral sputtering effects, smooth surface formation (average surface roughness less than 1 nm), thin surface layer formation at low substrate temperature etc.