Phonon transport in electronic devices: From diffusive to ballistic regime
Phonon transport in electronic devices: From diffusive to ballistic regime
复制标题
电子设备中的声子传输：从扩散到弹道状态
DOI：
10.1109/sispad.2008.4648293
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
G. Carval
中科院分区：
文献类型：
--
作者：
B. Thouy;J. Mazellier;Jean;G. Carval
本文提出了一种适用于硅基薄膜声子输运的格子Boltzmann模型，并用OpenLB库实现了该模型[1]。该模型是基于玻尔兹曼方程的离散化和声子的ldquograyrdq模型。通过这种方法，我们可以处理复杂结构和各种材料中的传热问题。我们通过比较薄膜中的温度分布和热导率与文献数据来验证我们的模型。最后讨论了该方法在弹道情况下的改进。
This paper presents a Lattice Boltzmann Model applied to phonon transport in silicon-based films, implemented with the OpenLB library [1]. This model is based on the discretization of Boltzmann equation with the ldquograyrdquo model for phonons. By this approach we can treat heat transfer in complex structures and various materials. We have validated our model by comparing temperature profiles and thermal conductivities in thin films to literature data. Finally, we discuss an improvement of the method in the ballistic case.