Thermally assisted oxidation of GaSb(100) and the effect of initial oxide phases
Thermally assisted oxidation of GaSb(100) and the effect of initial oxide phases
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DOI：
10.1016/j.apsusc.2016.02.061
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发表时间：
2016-04-30
影响因子：
6.7
通讯作者：
Kokko, K.
中科院分区：
文献类型：
--
作者：
Makela, J.;Tuominen, M.;Kokko, K.
GaSb（100）表面的氧化影响着各种器件的功能，因此得到了广泛的研究。然而，即使是氧掺入的初始阶段也没有完全理解。为了澄清这个问题，我们已经研究了氧化的GaSb（100）表面，这是最近探测的扫描隧道显微镜和光谱，高分辨率同步辐射光电子能谱，以互连这些不同的测量。结果给出了明确的支持，即氧化是通过可用Ga键的饱和而开始的;即，在表面层中用O-Ga取代一些Sb-Ga键。氧原子具有两种不同的成键环境，这与两种主要的STM特征相一致。还阐明了等离子体激元特征在光谱中的作用。(C)2016爱思唯尔B. V.保留所有权利。
The oxidation of GaSb(100) surface has been widely studied because it affects the functionality of various devices. However even initial stages of the oxygen incorporation are not completely understood. To clarify this issue, we have investigated the oxidized GaSb(100) surfaces, which have been recently probed by scanning tunneling microscopy and spectroscopy, with high resolution synchrotron radiation photoelectron spectroscopy, in order to interconnect these different measurements. The results give a clear support that the oxidation initiates through saturation of available Ga bonds with; i.e., replacing some of the Sb-Ga bonds with O-Ga in the surface layers. Oxygen atoms have two different bonding environments in consistent with two dominating STM features. Also role of the plasmon features in the spectra have been elucidated. (C) 2016 Elsevier B.V. All rights reserved.