Enhancement of tunneling electroresistance by interfacial cation intermixing in ferroelectric tunnel junctions
Enhancement of tunneling electroresistance by interfacial cation intermixing in ferroelectric tunnel junctions
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DOI：
10.1016/j.apsusc.2020.145707
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发表时间：
2020-05
影响因子：
6.7
通讯作者：
Liming Chen;Yuzhang Feng;Yequan Chen;Yongda Chen;Ruxin Liu;D. Pan;Peng Wang;Yongbing Xu;Rong Zhang;Xuefeng Wang
中科院分区：
文献类型：
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作者：
Liming Chen;Yuzhang Feng;Yequan Chen;Yongda Chen;Ruxin Liu;D. Pan;Peng Wang;Yongbing Xu;Rong Zhang;Xuefeng Wang
Ferroelectric tunnel junctions (FTJs) have recently aroused extensive attention for applications in information storage. However, the interfacial effect regarding the metallic electrodes on tunneling electroresistance (TER) has still remained unclear in traditional FTJs. Here, we observe the TER enhancement in an all-oxide FTJ, which consists of La0.7Sr0.3MnO3(LSMO), BaTiO3(BTO) and Nb:SrTiO3(NSTO). This FTJ device exhibits a giant ON/OFF current ratio of ~104at room temperature, which is two orders of magnitude larger than that of Pt/BTO/NSTO FTJ. Using combined microscopic and spectroscopic techniques, we find that Mn-Ti cation intermixing at LSMO/BTO interface is closely associated with the polarization direction of BTO, resulting in the change of the ratio of Mn3+/Mn4+as well as magnetic exchange interactions. Finally, the interface resistance state is tuned. In addition, the device has the long resistance retention and the high switching reproducibility. Our work emphasizes the crucial role of LSMO electrode and interfacial effect in all-oxide FTJs and provide a feasible way to design the high-performance non-volatile resistive memory devices.
