Photoemission from GaAs-Cs-O
Photoemission from GaAs-Cs-O
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DOI：
10.1088/0022-3727/1/2/303
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发表时间：
1968-02
期刊：
影响因子：
--
通讯作者：
A. A. Turnbull-A.;G. B. Evans
中科院分区：
文献类型：
--
作者：
A. A. Turnbull-A.;G. B. Evans
高产率光发射，已经报道了GaAs-Cs，也观察到GaAs-Cs- o。表面涂有Cs-O涂层的GaAs和钨的产率光谱分布表明，这种涂层的功函数至少与GaAs- cs一样低。GaAs-Cs- o的光发射产率接近GaAs-Cs的最高产率，并且表现出更大的稳定性。结果表明，在砷化镓中光激发的电子可以通过Cs-O涂层扩散，而数量上没有明显的损失。
High-yield photoemission, already reported for GaAs-Cs, is also observed for GaAs-Cs-O. Spectral distributions of yields from both GaAs and tungsten with surface coatings of Cs-O indicate that the work function of such coatings is at least as low as that of GaAs-Cs. Photoemissive yields from GaAs-Cs-O have approximated to the highest observed from GaAs-Cs and have exhibited greater stability. It is concluded that electrons, photoexcited in the GaAs, can diffuse through the coating of Cs-O without a significant loss in number.