A simple bilayered magnetoelectric random access memory cell based on electric-field controllable domain structure
A simple bilayered magnetoelectric random access memory cell based on electric-field controllable domain structure
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DOI：
10.1063/1.3463408
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发表时间：
2010-08-15
影响因子：
3.2
通讯作者：
Nan, C. W.
中科院分区：
文献类型：
--
作者：
Hu, Jia-Mian;Li, Zheng;Nan, C. W.
通过考虑铁磁条畴结构中畴壁散射的影响，提出了一种简单的双层磁电随机存储单元，其结构是在铁电层上生长铁磁薄膜。计算结果表明，在铁电层上施加电场后，铁磁薄膜中的条畴结构可以转变为单畴结构。结果，响应于条纹畴（单畴）状态的畴壁的存在（不存在）可以引起膜电阻率的突变，这可以相应地用于存储器应用。(C)2010年美国物理学会。[doi：10.1063/1.3463408]
By considering the domain wall scattering in ferromagnetic striped-domain structure, we present a simple bilayered magnetoelectric random access memory cell with a ferromagnetic thin film grown on a ferroelectric layer. The calculations show that the striped-domain structure in the ferromagnetic film can change into a single-domain structure upon applying an electric field to the ferroelectric layer. As a result, the presence (absence) of the domain walls in response to the striped-domain (single-domain) state can cause an abrupt change in the film resistivity, which could be employed for memory applications accordingly. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3463408]