InP quantum dot lasers with temperature insensitive operating wavelength
InP quantum dot lasers with temperature insensitive operating wavelength
复制标题
工作波长对温度不敏感的 InP 量子点激光器
DOI：
--
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
A. Krysa
中科院分区：
文献类型：
--
作者：
S. Shutts;P. Smowton;A. Krysa
我们量化的机制，管理的激射波长的边缘发射的InP/AlGaInP量子点（QD）激光器，通过表征的组成因素控制的增益峰值波长的温度依赖性。我们表明，存在一个制度，其中的带隙的温度系数可以通过增加的波长偏移与状态填充在QD系综，必要的恢复增益峰值幅度补偿。我们展示了劈裂面边缘发射激光器的波长温度依赖性为0.03 nm/K，类似于在这种材料中制造的布拉格堆叠的温度依赖性和大约六分之一的带隙的依赖性。
We quantify the mechanisms that govern the lasing wavelength in edge-emitting InP/AlGaInP quantum dot (QD) lasers, by characterising the constituent factors controlling the temperature dependence of the gain peak wavelength. We show that a regime exists where the temperature coefficient of the bandgap can be compensated by the increasing wavelength-shift associated with state-filling in the QD ensemble, necessary to recover the gain peak magnitude. We demonstrate cleaved-facet edge-emitting lasers with a wavelength temperature dependence of 0.03 nm/K, similar to the temperature dependence of a Bragg stack fabricated in this material and approximately a sixth of the dependence of the bandgap.