Design Consideration for a Two-Distributed-Junction Tuning Circuit
Design Consideration for a Two-Distributed-Junction Tuning Circuit
复制标题
二分布式结调谐电路的设计考虑
DOI：
10.1007/s10762-004-2031-8
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
T. Noguchi
中科院分区：
文献类型：
--
作者：
Y. Uzawa;M. Takeda;A. Kawakami;Z. Wang;T. Noguchi
我们描述了一种新的方法设计的调谐电路与两个半波分布结分开的半波长微带线，解析地确定电路参数，如最小电流密度的结和分布结和微带线的特性阻抗。调谐电路先用简单的传输理论近似，然后用理想元件简化，便于分析。我们应用切比雪夫的带通滤波器理论，部分，以优化电路设计。分析结果表明，一个高的特性阻抗比之间的分布结和微带线是必要的，以获得宽带匹配使用低电流密度结。用该方法设计的全NbN SIS混频器的实验结果表明，对于电流密度仅为4 kA/cm ~ 2的混频器，在710 ~ 810 GHz范围内，双边带（DSB）接收机噪声温度为6-10个量子（在750 GHz下估计ωCJRN乘积为37）。射频带宽比传统的全波分布式SIS混频器具有相同的电流密度。
We describe a novel method of designing a tuning circuit with two half-wave distributed junctions separated by a half-wavelength microstripline, which analytically determines the circuit parameters such as the minimum current density of the junctions and the characteristic impedances of the distributed junctions and the microstripline. The tuning circuit was approximated by simple transmission theory and then simplified with ideal circuit components for analysis. We applied Chebyshev’s band-pass filter theory, in part, to optimize the circuit design. The analytical results revealed that a high characteristic-impedance ratio between the distributed junctions and the microstripline is necessary to obtain broadband matching using low-current-density junctions. The experimental results for all-NbN SIS mixers we designed with this method demonstrated double-sideband (DSB) receiver-noise temperatures of 6–10 quanta from 710 to 810 GHz for a mixer with a current density of only 4 kA/cm2 (estimated ωCJRN product of 37 at 750 GHz). The RF bandwidth was broader than that of a conventional full-wave distributed SIS mixer with the same current density.