Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs*
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs*
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DOI：
10.1088/1674-1056/27/4/047307
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发表时间：
2018-04
影响因子：
1.7
通讯作者：
Tingting Liu;Kai Zhang;G. Zhu;Zhou Jianjun;Y. Kong;Xinxin Yu;Tangsheng Chen
中科院分区：
文献类型：
--
作者：
Tingting Liu;Kai Zhang;G. Zhu;Zhou Jianjun;Y. Kong;Xinxin Yu;Tangsheng Chen
研究了鳍结构对AlGaN/GaNFinFET线性特性的影响。结果表明，与长鳍和平面HEMT相比，鳍尺寸缩小的FinFET表现出更平坦的Gm特性。通过对比研究，我们提供了直接的证据，源极电阻，而不是三栅结构本身的Gm行为的主导。此外，功率测量表明，优化的FinFET是能够提供一个更高的输出功率密度沿着与显着改善的线性特性比传统的平面HEMT。这项研究也强调了鳍设计的重要性，在GaN基FinFET微波功率应用，特别是高线性度的应用。
We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET. It is found that the FinFET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT. According to the comparative study, we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior. Furthermore, power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT. This study also highlights the importance of fin design in GaN-based FinFET for microwave power application, especially high-linearity applications.