High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots
High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots
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Fe3Si 纳米点的高密度形成和磁电子传输特性
DOI：
10.1149/08607.0131ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
and Seiichi Miyazaki
中科院分区：
文献类型：
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作者：
Hai Zhang;Katsunori Makihara;Mitsuhisa Ikeda;Akio Ohta;and Seiichi Miyazaki
我们制作了DO 3-orderd Fe 3Si纳米点（ND）上的SiO2和评估局部IV特性，通过单独的点磁场应用下，通过使用原子力显微镜（AFM）与磁悬臂梁。在热生长的SiO2上，采用H2等离子体处理非晶Fe/非晶硅/Fe三层堆叠结构，制备了面密度高达~ 1011 cm-2的高密度Fe硅化物纳米结构。通过X射线衍射和磁化强度测量证实了DO 3-orderd ND的形成。从局部电子输运性质，一个明确的变化，在电阻取决于磁化方向的Fe 3Si-ND相对于CoPtCr涂层AFM针尖被确认在室温下。
We fabricated DO3-orderd Fe3Si-nanodots (NDs) on ultrathin SiO2 and evaluated local IV characteristics through individual dots under magnetic field application by using atomic force microscopy (AFM) with a magnetic cantilever. High-density Fe-silicide NDs with an areal density as high as~ 1011 cm-2 were formed on thermally grown SiO2 by exposing ultrathin Fe/amorphous-Si/Fe tri-layer stacked structures to a remote H2 plasma without external heating. The formation of DO3-orderd NDs was confirmed by X-ray diffraction and magnetization measurements. From local electron transport properties, a clear change in resistance depending on the magnetization direction of Fe3Si-NDs with respect to the CoPtCr-coated AFM tip was confirmed at room temperature.